作者: B. Zijlstra
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摘要: Graphene is an interesting material for applications in organic spintronics, because of its high mobility and predicted long spin relaxation times. In practice however, only lengths up to 1-2 μm have been observed [1]. Materials close proximity graphene suspected significantly influence spintronic properties. thick stacks monolayers, aka graphite, the transport spins would be less affected by such interface effects. The ultimate goal this master thesis was measure length and/or time bulk graphite. Therefore, a fabrication procedure had developed make devices on graphite substrates that allow type probing. Using shadow mask deposition, with vertical valve geometry were fabricated. However, device not suitable non-local probing, electrical measurements indicated bad performance. Simultaneously, developed, which combination e-beam lithography photolithography used fabricate lateral geometry. Despite initial problems fabricating these devices, most difficulties resolved could, eventually, made readily. Electrical showed still often undesired unpredictable behavior. presumed caused defective tunnel barriers. final stages project, some electrodes good tunneling behavior, but modifications led improvement, also become mechanically unstable at low temperatures required dependent measurements. Subsequent Hanle barriers did show any peaks, instead (spurious) LMR effect