作者: J. Takeya , M. Yamagishi , Y. Tominari , R. Hirahara , Y. Nakazawa
DOI: 10.1063/1.2711393
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摘要: … We have fabricated high-mobility OFETs by attaching purified rubrene crystals on Si O 2 gate insulators coated with high-density SAMs. Minimizing the amount of interface traps, carriers …