Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy
作者： Wakana Hara , Jin Liu , Atsushi Sasaki , Sei Otaka , Norihiro Tateda
DOI: 10.1016/J.TSF.2007.05.070
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摘要: Abstract We have fabricated epitaxial AlN thin films at room temperature on sapphire (0001) substrates with a TiN (111) buffer layer by pulsed laser deposition in ultra-high vacuum (laser molecular beam epitaxy method). The layers were also temperature. Four-circle X-ray diffraction analysis and reflection high-energy electron results indicate the heteroepitaxial structure of (0001)/TiN (111)/sapphire relationship [10–10]||TiN [11–2]||sapphire [11–20]. surface room-temperature grown film was found to be atomically flat, reflecting nano-stepped ultrasmooth substrates. Then, we could achieve growth [AlN/TiN] multi-layer. dependence resistivity AlN/TiN multi-layer measured.
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P.R Chalker, T.B Joyce, C Johnston, J.A.A Crossley, J Huddlestone, M.D Whitfield, R.B Jackman, Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices Diamond and Related Materials. ,vol. 8, pp. 309- 313 ,(1999) , 10.1016/S0925-9635(98)00263-5
A. Gupta, B. Braren, K. G. Casey, B. W. Hussey, Roger Kelly, Direct imaging of the fragments produced during excimer laser ablation of YBa2Cu3O7−δ Applied Physics Letters. ,vol. 59, pp. 1302- 1304 ,(1991) , 10.1063/1.105481
N. Biunno, J. Narayan, A. R. Srivatsa, O. W. Holland, Laser deposition of epitaxial titanium nitride films on (100) MgO Applied Physics Letters. ,vol. 55, pp. 405- 407 ,(1989) , 10.1063/1.101881
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin‐ichi Nagahama, High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes Applied Physics Letters. ,vol. 67, pp. 1868- 1870 ,(1995) , 10.1063/1.114359
Atsushi Sasaki, Hiroshi Isa, Jin Liu, Shusaku Akiba, Teiichi Hanada, Mamoru Yoshimoto, Fabrication of Micropatterns on Sapphire Substrates via Room-Temperature Selective Homoepitaxial Growth Induced by Electron Beam Irradiation Japanese Journal of Applied Physics. ,vol. 41, pp. 6534- 6535 ,(2002) , 10.1143/JJAP.41.6534
Takakazu Kiyomura, Manabu Gomi, Room-Temperature Epitaxial Growth of Ni-Zn Ferrite Thin Films by Pulsed Laser Deposition in High Vacuum Japanese Journal of Applied Physics. ,vol. 36, pp. L1000- L1002 ,(1997) , 10.1143/JJAP.36.L1000
L. Lynds, B. R. Weinberger, G. G. Peterson, H. A. Krasinski, Superconducting thin films of Y‐Ba‐Cu‐O produced by neodymium:yttrium aluminum garnet laser ablation Applied Physics Letters. ,vol. 52, pp. 320- 322 ,(1988) , 10.1063/1.99480
S. Yoshida, S. Misawa, S. Gonda, Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates Applied Physics Letters. ,vol. 42, pp. 427- 429 ,(1983) , 10.1063/1.93952
M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication Applied Physics Letters. ,vol. 67, pp. 2615- 2617 ,(1995) , 10.1063/1.114313
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer Applied Physics Letters. ,vol. 48, pp. 353- 355 ,(1986) , 10.1063/1.96549