Fabrication of semiconducting SrB6−δ thin films on ultrasmooth sapphire substrates by laser molecular beam epitaxy
作者： Y. Kato , N. Shiraishi , N. Tsuchimine , S. Kobayashi , M. Yoshimoto
DOI: 10.1016/J.JCRYSGRO.2009.11.015
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摘要: Abstract We fabricated epitaxial SrB 6 (1 0 0) thin films on ultrasmooth sapphire (α-Al 2 O 3 single crystal) (0 0 0 1) substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray measurements indicated the heteroepitaxial structure of (1 0 0)/sapphire with three domains relationship. The prepared exhibited atomically stepwise surface morphology, similar to that substrate used, 0.2-nm-high atomic steps ∼70-nm-wide terraces. showed semiconducting behavior, a resistivity 4.8 Ω cm at room temperature.
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