Through-substrate via and redistribution layer with metal paste
作者： Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom , Maria Mathea Antonetta Burghoorn , Franciscus Hubertus Marie Sanders
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摘要: The invention relates to a semiconductor device for use in stacked configuration of the and further device. comprises: substrate (5) comprising at least part an electronic circuit (7) provided first side thereof. comprises passivation layer (19) via that extends from depth beyond such it is reconfigurable into through-substrate (10) by backside thinning (5). patterned masking (15) on trench (16) extending fully through (15). has been filled with redistribution conductor (20). (20) comprise metal paste (MP) together form one piece. effect features inventionis there no physical interface between those As consequence parasitic resistance this electrical connection reduced, which results better performance method manufacturing And assembly plurality devices.
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