Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system

摘要: Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These a tunable ultraviolet (UV) light source, which is controlled to produce raster UV beam across surface wafer during epitaxial growth dissociate defects in the wafer. In various embodiments, source configured external Metal Organic Chemical Vapor Deposition (MOCVD) chamber such that directed though window defined wall MOCVD chamber.