作者: Evangelos S. Eleftheriou , Charalampos Pozidis , Angeliki Pantazi , Abu Sebastian , Nikolaos Papandreou
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摘要: A method and device for performing a program operation of phase change memory (PCM) cell. The includes the steps applying one or more programming pulses according to predefined scheme achieve target resistance level PCM cell, wherein is operable perform in first mode annealing approach resistance, second melting steps, start switch if cell has been undershot mode.