Methods to reduce the minimum pitch in a pattern

作者: Richard Elliot Schenker

DOI:

关键词:

摘要: Methods to reduce the minimum pitch of a pattern are described. A photo-resist on substrate is exposed radiation through mask. The mask has features that separated by distance. Photo-resist portions having first exposure radiation, second and third created. selectively removed from using chemistry. remain form substrate. distance between at least twice smaller than

参考文章(7)
Itty Matthew, Bhanwar Singh, Process margin using discrete assist features ,(2005)
Huey Ming Chong, Sia Kim Tan, Qun Ying Lin, Soon Yoeng Tan, Method for dual damascene patterning with single exposure using tri-tone phase shift mask ,(2003)
Jeroen Lammers, David Van Steenwinckel, Lithographic method for small line printing ,(2003)
Kazuo Sakamoto, Hideaki Kashiwagi, 秀明 柏木, 和生 坂本, Device and method for setting exposure conditions, and processor ,(2001)
Hasegawa Norio, Murai Fumio, PHOTOMASK AND ITS PRODUCTION ,(1992)