Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent
作者： Shahab Siddiqui , Dmitriy Shneyder , Matthew E. Colburn
DOI:
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摘要: Methods of developing or removing a select region block copolymer films using polar supercritical solvent to dissolve portion are disclosed. In one embodiment, the includes chlorodifluoromethane, which may be exposed film carbon dioxide (CO2) as carrier chlorodiflouromethane itself in form. The invention also method forming nano-structure including exposing polymeric develop at least film. poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist solvent.
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