Luminescence of N-Implanted In0.32Ga0.68P Grown by Liquid-Phase Epitaxy

摘要: The photoluminescence spectra of N-implanted In0.32Ga0.68P epitaxial layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy have been investigated at different annealing temperatures and times the rapid thermal technique. nitrogen level is located ~110 meV below Γ-band minimum for crystal. activation energy necessary to place N atoms into sites form N-isoelectronic trap 0.47 0.48 eV in Ar N2 ambients, respectively. optimum post-implantation condition obtain maximum isoelectronic emission intensity 800°C 30-s duration both ambients.