Photoluminescence of Indirect-Band-Gap GaAs1-xPx (x=0.52) Implanted with Nitrogen Ions
作者： Shun-ichi Gonda , Yunosuke Makita , Shigeru Maekawa , Hisao Tanoue , Toshio Tsurushima
DOI: 10.1143/JJAP.13.1483
关键词: Nitrogen 、 Analytical chemistry 、 Photoluminescence 、 Direct and indirect band gaps 、 Ion 、 Materials science
摘要:
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jsap.jp参考文章(1)
Yunosuke Makita, Shun-ichi Gonda, Hisao Tanoue, Toshio Tsurushima, Shigeru Maekawa, Hot Implantation of Nitrogen Ions into GaAs1-xPx (x=0.36) Japanese Journal of Applied Physics. ,vol. 13, pp. 563- 564 ,(1974) , 10.1143/JJAP.13.563