Composition‐ratio dependence of formation of bound states in nitrogen‐implanted AlxGa1−xAs
作者： Yunosuke Makita , Hachiro Ijuin , Shun‐ichi Gonda
DOI: 10.1063/1.88738
关键词: Inorganic chemistry 、 Emission intensity 、 Photoluminescence 、 Nitrogen 、 X-ray absorption spectroscopy 、 Bound state 、 Chemistry 、 Analytical chemistry 、 Composition (combinatorics) 、 Physics and Astronomy (miscellaneous)
摘要: The formation of isoelectronic bound states in AlxGa1−xAs implanted with nitrogen has been investigated by means photoluminescence. These can be observed for compositions x≳0.29. For x⩽0.31 the effect implantation is to decrease emission intensity.
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Shun-ichi Gonda, Yunosuke Makita, Shigeru Maekawa, Hisao Tanoue, Toshio Tsurushima, Photoluminescence of Indirect-Band-Gap GaAs1-xPx (x=0.52) Implanted with Nitrogen Ions Japanese Journal of Applied Physics. ,vol. 13, pp. 1483- 1484 ,(1974) , 10.1143/JJAP.13.1483
S. Y. Chiang, G. L. Pearson, Properties of vacancy defects in GaAs single crystals Journal of Applied Physics. ,vol. 46, pp. 2986- 2991 ,(1975) , 10.1063/1.321985
Yunosuke Makita, Shun‐ichi Gonda, Hachiro Ijuin, Toshio Tsurushima, Hisao Tanoue, Shigeru Maekawa, Enhancement of emission intensity in indirect‐gap AlxGa1−xAs (x=0.53) by nitrogen‐ion implantation Applied Physics Letters. ,vol. 28, pp. 103- 105 ,(1976) , 10.1063/1.88657
Shun‐ichi Gonda, Yunosuke Makita, A new luminescence line due to nitrogen implanted into AlxGa1−xAs (x=0.37) Applied Physics Letters. ,vol. 27, pp. 392- 394 ,(1975) , 10.1063/1.88505
Yunosuke Makita, Shun-ichi Gonda, Hisao Tanoue, Toshio Tsurushima, Shigeru Maekawa, Hot Implantation of Nitrogen Ions into GaAs1-xPx (x=0.36) Japanese Journal of Applied Physics. ,vol. 13, pp. 563- 564 ,(1974) , 10.1143/JJAP.13.563
U. Heim, P. Hiesinger, Luminescence and Excitation Spectra of Exciton Emission in GaAs Physica Status Solidi B-basic Solid State Physics. ,vol. 66, pp. 461- 470 ,(1974) , 10.1002/PSSB.2220660208
E. Hal Bogardus, H. Barry Bebb, Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs Physical Review. ,vol. 176, pp. 993- 1002 ,(1968) , 10.1103/PHYSREV.176.993
Yunosuke Makita, Shun‐ichi Gonda, Photoluminescence of boron‐implanted AlxGa1−xAs (x=0.37) Applied Physics Letters. ,vol. 27, pp. 333- 334 ,(1975) , 10.1063/1.88490