Observation ofinsituannealing in hot ion‐implantation of nitrogen into AlxGa1−xAs (x=0.53)
作者： Hidetoshi Nojiri , Toshio Tsurushima , Hisao Tanoue , Jun‐ichi Shimada , Yunosuke Makita
DOI: 10.1063/1.91076
关键词:
摘要: Photoluminescence measurements were carried out for indirect band‐gap Al0.53Ga0.47As crystals in which nitrogen ions implanted at various elevated temperatures. It was found that samples temperatures higher than 525 °C exhibit characteristic emission bands associated with the isoelectronic trap without any annealing treatments. This observation apparently shows substitutional procedure takes place simultaneously during implantation. We have also mechanism is closely related formation of arsenic vacancies through atoms are located to host sites.
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