Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
作者： Peter Kiesel , Christian G. Van de Walle , Michael A. Kneissl
DOI:
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摘要: A p-n tunnel junction between a p-type semiconductor layer and n-type provides current injection for an nitride based vertical cavity surface emitting laser or light diode structure. The reduces the number of layers in VCSEL LED structure which distributed loss, threshold densities, overall series resistance improves structural quality by allowing higher growth temperatures.
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