Phonon Confinement and Electron-Phonon Interactions in Semiconductor Nanostructures
作者： PD Wang , CM Sotomayor Torres , None
DOI: 10.1007/978-94-011-1683-1_42
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摘要: We report resonant Raman scattering and ‘hot’ carrier luminescence from deep dry etched GaAs-AlGaAs quantum dots. Up to 4th-order multiphonon processes were observed for the first time via photoluminescence (PL) excitation of PL (PLE) in Quantum confinement effects also found with various dot sizes. Confined interface phonons play an important role relaxation process. It demonstrates that is mediated by zero dimensional (0D) electronic states. The measured GaAs mode frequencies are agree well theoretical bulk LO phonon dispersion curve.
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