Correlation between the open-circuit voltage and recombination loss at metal-silicon interfaces of crystalline silicon solar cells

摘要: Abstract For screen-printed silicon solar cells, optimization of the contact characteristics between front metal electrode and is very significant for realizing high efficiency. As technology advances, cell efficiency has been steadily increased. Especially, as surface recombination becomes more important in understanding controlling area are necessary. Recombination at metal-silicon interface a major cause drop open-circuit voltage (Voc) cell. Thus far, study electrodes cells largely aimed reducing series resistance, few studies on due to have performed. Quantitatively evaluating assess effect expected become near future. In this paper, silver were analyzed using saturation current density (Jo) measurements according doping concentration firing temperature. The effects Voc also investigated. Experimental results showed that Jo.pass decreased with decreasing Jo.metal increased increasing quantitative analysis Jo.metal, size distribution Ag crystallites observed SEM TEM, was by ICP-OES measurements. larger was, higher crystallite concentration, indicating under Jo.metal. electrical calculating change velocity width Voc. Through study, metallized area, which increasingly important, particularly profile emitter region quantitatively assessed. amount wafer analyzed.