Cd1−xZnxTe thin films formed by non-aqueous electrochemical route
作者： N.B. Chaure , Shweta Chaure , R.K. Pandey
DOI: 10.1016/J.ELECTACTA.2008.07.081
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摘要: Abstract Polycrystalline thin films of graded band gap ternary cadmium zinc telluride (Cd1−xZnxTe) have been electrodeposited in a non-aqueous bath onto an indium tin oxide (ITO) coated glass cathode. Ethylene glycol was used as the medium. The cathodic electrodeposition semiconductor Cd1−xZnxTe studied using cyclic voltammetry conjunction with photovoltammetry, optical, compositional, structural measurements and surface morphology. It is shown that this alloy can be tuned from 1.42 to 2.21 eV by controlling Cd:Zn mole fractions. X-ray diffraction (XRD) energy dispersive analysis (EDAX) showed formation Cd1−xZnxTe, where x varied between 0 1. found observed XRD reflections all samples index cubic phase Cd1−xZnxTe. direction thermoemf developed has also opposite for binary CdTe films. resistivity rises increase indicating continuous solid solution ZnTe possess polycrystalline pyramidal grains compact void free
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