n- And p-type post-growth self-doping of CdTe single crystals

摘要: Abstract Careful analysis of the Cd–Te P–T–X phase diagram, allows us to prepare conducting p- and n-type CdTe, by manipulating native defect equilibria only, without resorting external dopants. Quenching following its annealing in Te atmosphere at 350–550°C, leads p-type conductivity with hole concentrations ∼2×10 16  cm −3 . Slow cooling samples, after 550°C atmosphere, increases concentration one order magnitude, as compared quenching from same temperature. We explain this increase reaction between donors V i Annealing Cd 350–550°C temperature range leads, contrast electron ascribe annihilation a result diffusion.