Study on the effect of Cd-diffusion annealing on the electrical properties of CdZnTe

摘要: Abstract In order to meet the requirements for device design of radiation detectors, CdZnTe (or Cd 1− x Zn Te) crystals grown by Vertical Bridgman Method often need subsequent annealing increase their resistivity. The nature this treatment is a diffusion process. Thus, it meaningful relate change resistivity parameters. A model correlating and conduction type with main parameter—diffusion coefficient—is put forward in paper. Combining analysis our experimental data, D =1.464×10 −10 , 1.085×10 −11 4.167×10 −13  cm 2 /s are values self-diffusion coefficient 0.9 0.1 Te at 1073, 973 873 K, respectively. data coincide closely CdTe provided different authors [E.D. Jones, N.M. Stewart, Self-diffusion cadmium telluride, J. Crystal Growth 84 (1987) 289–294; P.M. Borsenberger, D.A. Stevenson, Phys. Chem. Solids 29 (1968) 1277; R.C. Whelan, D. Shaw, in: D.G. Thomas (Ed.), II – VI Semiconductor Compounds, Benjamin, New York, 1967, p. 451]. With effects time on wafers, which annealed saturated vapor were simulated, good consistency was found. This work suggests an alternative way obtain semiconductor materials also enables ones analyze process quantitatively predict results.