Study of the diffusion of Te inclusions in CdZnTe nuclear detectors in post-growth annealing
作者： Ge Yang , SU Egarievwe , AL Adams , ML Drabo , MD Ashford
DOI: 10.1109/NSSMIC.2012.6551963
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摘要: Despite immense endeavor invested in optimizing the crystal growth parameters and post improvement methodologies proposed by numerous studies, there are still unresolved shortcomings of CdZnTe crystals to produce commercial-grade detectors. Post-growth thermal annealing under Zn, Te, or Cd vapor overpressure at various temperature have been approach attempted improve crystallinity crystals. This paper presents results detectors that shows both reduction sizes Te inclusions migration towards high-temperature side crystal. Two set experiments were made. The first is vacuum 600 °C for 45 minutes a gradient 10 °C/cm. second post-growth was carried out 700 with Cadmium 650 °C, 30 time, ranges from 8% 38%.
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