Spectroscopic measurement of packaging induced strains in high-power laser diode arrays

作者: J.W. Tomm , R. Muller , A. Barwolff , T. Elsaesser , A. Gerhardt

DOI: 10.1109/CLEO.1999.834006

关键词:

摘要: Summary form only given. High-power diode lasers are important for a wide range of applications, e.g. as pump sources solid state and tools material processing. For managing the thermal load connected with high power operation, complex device heat sink architectures required. In particular, semiconductor structure must be mounted 'p-side down' on conductivity. such geometry, mechanical strain active region represents central issue, affecting both parameters laser emission lifetime device.

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