Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes
作者： P.D. Colbourne , D.T. Cassidy
DOI: 10.1109/3.83326
关键词:
摘要: Mechanical stress induced by bonding AlGaAs superluminescent diodes to Cu, SiC, or diamond heat sinks using 40% Pb-60% Sn 80% Au-20% solder has been observed measurements of the degree polarization facet emission at low current levels. Stresses up 10/sup 9/ dyn/cm/sup 2/ were observed, with magnitude dependent on used, and sign difference in thermal expansion coefficient between diode sink. Relaxation over time was investigated as a function temperature for each solder. The implications relaxation interpretation high-temperature life tests, laser are discussed. >
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