作者: P G Eliseev , A V Khaidarov
DOI: 10.1070/QE1975V005N01ABEH010732
关键词:
摘要: An experimental study showed that uniaxial compression (about 3000 kgf/cm2) accelerated the gradual degradation of gallium arsenide diodes. This was interpreted with aid a dislocation model in which centers were attributed to originally present dislocations multiplied by climb and slip processes. It suggested activated nonradiative recombination electron-hole pairs.