Role of mechanical stresses in gradual degradation of light-emitting diodes and injection lasers

作者: P G Eliseev , A V Khaidarov

DOI: 10.1070/QE1975V005N01ABEH010732

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摘要: An experimental study showed that uniaxial compression (about 3000 kgf/cm2) accelerated the gradual degradation of gallium arsenide diodes. This was interpreted with aid a dislocation model in which centers were attributed to originally present dislocations multiplied by climb and slip processes. It suggested activated nonradiative recombination electron-hole pairs.

参考文章(2)
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