Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation
作者： H. Kressel , N. E. Byer , H. Lockwood , F. Z. Hawrylo , H. Nelson
DOI: 10.1007/BF02811588
关键词:
摘要: Metallurgical imperfections in the recombination region such as dislocations and Ga2Te3 precipitates are shown to greatly increase rate of degradation quantum efficiency electroluminescent diodes lasers. In addition, is depend on acceptor used form thep-n junction, with beryllium-doped junctions degrading much faster than equivalent zinc-doped devices.
springer.com
harvard.edu
sci-hub.se 参考文章(10)
S.A. Steiner, R.L. Anderson, Degradation of GaAs injection devices Solid-State Electronics. ,vol. 11, pp. 65- 86 ,(1968) , 10.1016/0038-1101(68)90139-1
J. F. Black, E. D. Jungbluth, Precipitates Induced in GaAs by the In‐Diffusion of Zinc Journal of The Electrochemical Society. ,vol. 114, pp. 181- 187 ,(1967) , 10.1149/1.2426534
M. S. Abrahams, C. J. Buiocchi, J. J. Tietjen, Detection of Selenium Clustering in GaAs by Transmission Electron Microscopy Journal of Applied Physics. ,vol. 38, pp. 760- 764 ,(1967) , 10.1063/1.1709408
B. Goldstein, Diffusion of Cadmium and Zinc in Gallium Arsenide Physical Review. ,vol. 118, pp. 1024- 1027 ,(1960) , 10.1103/PHYSREV.118.1024
Robert D. Gold, Leonard R. Weisberg, Permanent degradation of GaAs tunnel diodes Solid-state Electronics. ,vol. 7, pp. 811- 821 ,(1964) , 10.1016/0038-1101(64)90133-9
C. Lanza, K.L. Konnerth, C.E. Kelly, Aging effects in GaAs electroluminescent diodes Solid-state Electronics. ,vol. 10, pp. 21- 31 ,(1967) , 10.1016/0038-1101(67)90109-8
H. Kressel, N.E. Byer, Physical basis of noncatastrophic degradation in GaAs injection lasers Proceedings of the IEEE. ,vol. 57, pp. 25- 33 ,(1969) , 10.1109/PROC.1969.6865
N. Byer, Role of optical flux and of current density in gradual degradation of GaAs injection lasers IEEE Journal of Quantum Electronics. ,vol. 5, pp. 242- 245 ,(1969) , 10.1109/JQE.1969.1075764
H. Nelson, High-power pulsed GaAs laser diodes operating at room temperature Proceedings of the IEEE. ,vol. 55, pp. 1415- 1419 ,(1967) , 10.1109/PROC.1967.5843
H. Kressel, F. Z. Hawrylo, M. S. Abrahams, C. J. Buiocchi, Observations Concerning Radiative Efficiency and Deep‐Level Luminescence in n‐Type GaAs Prepared by Liquid‐Phase Epitaxy Journal of Applied Physics. ,vol. 39, pp. 5139- 5144 ,(1968) , 10.1063/1.1655934