Degradation of AlxGa1−xAs heterojunction electroluminescent devices
作者： M. Ettenberg , H. Kressel , H. F. Lockwood
DOI: 10.1063/1.1655290
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摘要: Experimental results are presented correlating the operating life of (AlGa)As heterojunction diodes with recombination region doping and Al concentration. For a given level, is shown to increase addition Al. The relationship between spontaneous emission degradation lasing properties has also been studied.
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