作者: O. Thomas , S. Delage , F. M. d’Heurle , G. Scilla
DOI: 10.1063/1.101444
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摘要: The reaction of Ti with pure Ge and several Ge‐Si alloys has been investigated the double aim understanding throwing some light on still vexing problem Ti‐Si reaction. With one observes first all formation Ti6Ge5 until complete consumption is present. This followed by clearly identifiable nucleation TiGe2, initially forming islands that grow laterally. a 50‐50 (at. %) alloy Si Ge, distinct growth steps, but there overlap between initial phase, Ti(Ge,Si)2.