2H-SiC films grown by laser chemical vapor deposition
作者： Akihiko Ito , Hitoshi Kanno , Takashi Goto
DOI: 10.1016/J.JEURCERAMSOC.2015.08.028
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摘要: Abstract We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for SiC in CH4 atmosphere. The were obtained at deposition temperature 920 K substrate. comprised a-axis-oriented columnar grains their in-plane orientation relationship [1000] // [0001] sapphire. deposited rate 182 μm h−1.
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sci-hub.se 参考文章(36)
O. Benkherourou, S. Sahnoune, M. Djabi, J-P. Deville, Analysis of photoemission lines in silicon nitrided layers formed by low-energy nitrogen ion implantation in silicon Vacuum. ,vol. 53, pp. 427- 433 ,(1999) , 10.1016/S0042-207X(98)00465-5
L. Simon, J. L. Bischoff, L. Kubler, X-ray photoelectron characterization of 6 H − SiC ( 0001 ) Physical Review B. ,vol. 60, pp. 11653- 11660 ,(1999) , 10.1103/PHYSREVB.60.11653
I. Berman, C.E. Ryan, The growth of silicon carbide needles by the vapor-liquid-solid method Journal of Crystal Growth. ,vol. 9, pp. 314- 318 ,(1971) , 10.1016/0022-0248(71)90248-X
W. A. Bryant, The fundamentals of chemical vapour deposition Journal of Materials Science. ,vol. 12, pp. 1285- 1306 ,(1977) , 10.1007/BF00540843
J.L. Bischoff, F. Lutz, D. Bolmont, L. Kubler, Use of multilayer techniques for XPS identification of various nitrogen environments in the Si/NH3 system Surface Science. ,vol. 251, pp. 170- 174 ,(1991) , 10.1016/0039-6028(91)90975-X
Ryuma Hashimoto, Akihiko Ito, Takashi Goto, Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition Ceramics International. ,vol. 41, pp. 6898- 6904 ,(2015) , 10.1016/J.CERAMINT.2015.01.142
P. Pirouz, M. Zhang, H. McD. Hobgood, M. Lancin, J. Douin, B. Pichaud, Nitrogen doping and multiplicity of stacking faults in SiC Philosophical Magazine. ,vol. 86, pp. 4685- 4697 ,(2006) , 10.1080/14786430600724470
Lyle Patrick, D. R. Hamilton, W. J. Choyke, Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure Physical Review. ,vol. 143, pp. 526- 536 ,(1966) , 10.1103/PHYSREV.143.526
Akihiko Ito, Hokuto Kadokura, Teiichi Kimura, Takashi Goto, Texture and orientation characteristics of α-Al2O3 films prepared by laser chemical vapor deposition using Nd:YAG laser Journal of Alloys and Compounds. ,vol. 489, pp. 469- 474 ,(2010) , 10.1016/J.JALLCOM.2009.09.088
B. B. Burton, S. W. Kang, S. W. Rhee, S. M. George, SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy Journal of Physical Chemistry C. ,vol. 113, pp. 8249- 8257 ,(2009) , 10.1021/JP806638E