Dielectric and conduction studies on hot-wall deposited CdSe films

摘要: Abstract CdSe films are deposited using hot-wall deposition technique on glass and ITO substrates. From the XRD analysis, structural parameters like crystallite size, dislocation density strain were calculated. Films had preferential orientation along (0 0 2) structure of film corresponded to wurtzite nature. EDAX analysis a slight increase in cadmium content is observed as thickness increases. The dielectric study has been carried out stoichiometric at different frequencies temperatures their effect capacitance, constant loss. To explore illumination these fundamental parameters, measurements taken dark well under an 1000 lx. variation parameters. temperature coefficient relative permittivity linear expansion evaluated. AC conduction studies was found be due hopping. Variation conductivity with reveals presence two activation energies. Mott–Schottky plot for yields value carrier concentration range 1017–1018 cm−3 n-type.