Defects in cadmium selenide
作者： IE Türe , M Claybourn , AW Brinkman , J Woods , None
DOI: 10.1016/0022-0248(85)90142-3
关键词: Valence band 、 Depletion region 、 Analytical chemistry 、 Atomic physics 、 Copper 、 Electron capture 、 Cadmium selenide 、 Photoconductivity 、 Capacitance 、 Doping 、 Materials science
摘要: Abstract Deep levels in undoped and copper doped CdSe have been investigated using a variety of depletion region capacitance photoconductivity techniques. A sensitising centre with level 0.62 eV above the valence band was found material. This also detected CdSe, but main associated ∼ 1.0 band. The hole capture cross section for this 10-13 cm2 (from ODLTS) its electron cross-section 10-18 DLTS). ratio 105 clearly indicates that acts as sensitiser.
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