Reactive ion etching of 6H-SiC in an ECR plasma of CF4-O2 mixtures using both Ni and Al masks

摘要: Abstract We report on the dry etching of 6H-SiC using a RF-biased electron cyclotron resonance plasma and CF4-O2 mixture. have investigated rate dependency percentage oxygen in gas mixture, total pressure flow gas. found that mixture with 40% O2 residence time about 1 s, optimum etch crystals grown by natural Lely method was 80 nm min−1. After 20 min etching, surface morphology atomic force microscopy. It very satisfactory no evidence large residues. Finally, selectivity Al Ni masking investigated. With respect to bulk 6H-SiC, we 16 for 40 Ni.