Vertical GaAs MESFET for smart power switching applications

摘要: In this paper, we present a novel GaAs power MESFET designed to take advantage of the high switching speed, low on-state resistance and suitability for temperature operation devices. This vertical geometry device is have reverse breakdown voltage at least 800 V and, when fabricated in an interdigitated array devices, current capacity 10 A. addition, conventional lateral logic MESFETs, junction-isolated from conductive substrate, will be incorporated onto same die smart applications.