Nicholas Wright
机构: Professor of Electronic Materials, Newcastle University
每年引用次数
引用次数
引用: 5,985
H-指数: 42
I10-指数 : 121
出版物: 373
Vertical GaAs MESFET for smart power switching applications
M. Hossin , A.G. O'Neill , R. Gwilliam , N.G. Wright
Power Semiconductor Devices, IEE Colloquium on
1994
4H-SiC rectifiers with dual metal planar Schottky contacts
K.V. Vassilevski , A.B. Horsfall , C.M. Johnson , N.G. Wright
IEEE Transactions on Electron Devices 49 ( 5) 947 -949
24
2002
800 V GaAs MESFET for power switching applications
N.G. Wright , C.M. Johnson , A.G. O'Neill , M. Hossin
international symposium on power semiconductor devices and ic's 148 -152
1995
Surface passivation techniques for GaAs power Schottky diodes
N.G. Wright , C.M. Johnson , A.G. O'Neill
international symposium on power semiconductor devices and ic's 141 -144
1
1997
Structural studies of II-VI semiconductors at high pressure
R.J. Nelmes , M.I. McMahon , N.G. Wright , D.R. Allan
Journal of Physics and Chemistry of Solids 56 545 -549
60
1995
Structural studies of III–V and group IV semiconductors at high pressure
R.J. Nelmes , M.I. McMahon , N.G. Wright , D.R. Allan
Journal of Physics and Chemistry of Solids 56 539 -543
57
1995
Evaluation of 4H-SiC varactor diodes for microwave applications
N.G. Wright , A.P. Knights , A.G. O'Neill , C.M. Johnson
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) 301 -306
3
1999
Semi-transparent SiC Schottky diodes for X-ray spectroscopy
J.E. Lees , D.J. Bassford , G.W. Fraser , A.B. Horsfall
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 578 ( 1) 226 -234
23
2007
Test chip for the development and evaluation of sensors for measuring stress in metal interconnects
J.G. Terry , S. Smith , A.J. Walton , A.M. Gundlach
IEEE Transactions on Semiconductor Manufacturing 18 ( 2) 255 -261
14
2005
Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal-Insulator-Metal Devices
R. Mahapatra , A. B. Horsfall , N.G. Wright
Journal of Electronic Materials 41 ( 4) 656 -659
9
2012
Self-powered X-Ray sensors for extreme environments
N.S. Mohamed , N.G. Wright , A.B. Horsfall
ieee sensors 1 -3
2
2017
A new SiC/SOI-based PWM generator for SiC-based power converters in high temperature environments
O. Mostaghimi , D.R. Brennan , N.G. Wright , A.B. Horsfall
power and energy conference at illinois 1 -5
2012
Device processing and characterisation of high temperature silicon carbide Schottky diodes
K.V. Vassilevski , I.P. Nikitina , N.G. Wright , A.B. Horsfall
Microelectronic Engineering 83 ( 1) 150 -154
40
2006
Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation
P. Bhatnagar , A.B. Horsfall , N.G. Wright , C.M. Johnson
Solid-state Electronics 49 ( 3) 453 -458
21
2005
Recent progress and current issues in SiC semiconductor devices for power applications
C.M. Johnson , N.G. Wright , M.J. Uren , K.P. Hilton
IEE Proceedings - Circuits, Devices and Systems 148 ( 2) 101 -108
25
2001
Piezoelectric-powered wireless sensor system with regenerative transmit mode
S. Barker , A.B. Horsfall , D. Brennan , N.G. Wright
IET Wireless Sensor Systems 1 ( 1) 31 -38
11
2011
A novel sensor for the direct measurement of process induced residual stress in interconnects
A.B. Horsfall , J.M.M. dos Santos , S.M. Soare , N.G. Wright
european solid-state device research conference 115 -118
13
2003
Complementary JFET Logic for Low-Power Applications in Extreme Environments
H. Habib , N.G. Wright , A.B. Horsfall
Materials Science Forum 1052 -1055
1
2013
Calibration of MEMS-based test structures for predicting thermomechanical stress in integrated circuit interconnect structures
J.M.M. dos-Santos , Kai Wang , A.B. Horsfall , J.C.P. Pina
IEEE Transactions on Device and Materials Reliability 5 ( 4) 713 -719
11
2005
Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric
R. Mahapatra , S. Maji , A.B. Horsfall , N.G. Wright
Microelectronic Engineering 138 118 -121
16
2015