High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

V. Karthik Nagareddy , Sandra C. Hernández , Virginia D. Wheeler , Luke O. Nyakiti
Materials Science Forum 145 -148

2013
Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics

Benjamin J.D. Furnival , Sandip K. Roy , Nicolas G. Wright , Alton B. Horsfall
Materials Science Forum 837 -840

2013
Applications-Based Design of SiC Technology

Nicolas G. Wright , C. Mark Johnson , Alton B. Horsfall , Cyril Buttay
Materials Science Forum 919 -924

2008
Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure

Rajat Mahapatra , Alton B. Horsfall , Nicolas G. Wright
Materials Science Forum 759 -762

2008
Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide

Ming Hung Weng , Rajat Mahapatra , Nicolas G. Wright , Alton B. Horsfall
Materials Science Forum 771 -774

1
2008
Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers

C. A. Zorman , M. Pozzi , M. Mehregany , J. S. Burdess
2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings 65 -68

2007
Effect of different surface coverages of transition metals on the electronic and structural properties of diamond

Amit K. Tiwari , J. P. Goss , P. R. Briddon , N. G. Wright
Physica Status Solidi (a) 209 ( 9) 1697 -1702

10
2012
Bromine functionalisation of diamond: An ab initio study

Amit K. Tiwari , J. P. Goss , P. R. Briddon , N. G. Wright
Physica Status Solidi (a) 209 ( 9) 1703 -1708

14
2012
Thermodynamic stability and electronic properties of F‐ and Cl‐terminated diamond

Amit K. Tiwari , J. P. Goss , P. R. Briddon , N. G. Wright
Physica Status Solidi (a) 209 ( 9) 1709 -1714

7
2012
Assessment of aluminium metallisation by nanoindentation

S. M. Soare , S. J. Bull , A. Horsfall , J. Dos Santos
MRS Proceedings 750 ( 1) 1 -6

4
2002
Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

A. R. Saha , C. B. Dimitriu , A. B. Horsfall , S. Chattopadhyay
Journal of Applied Physics 99 ( 11) 113707

3
2006
Discriminating gas concentrations in extreme temperature environments

B. J. D. Furnival , N. G. Wright , A. B. Horsfall
ieee sensors 1044 -1047

2
2011
Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes

D. R. Brennan , O. Mostaghimi , K. V. Vassilevski , N. G. Wright
ieee sensors 1 -4

2
2012
Oxygen functionalised epitaxial graphene sensors for enhanced polar organic chemical vapour detection

V. K. Nagareddy , J. P. Goss , N. G. Wright , A. B. Horsfall
ieee sensors 1 -4

2
2012
High temperature storage for energy harvesting in hostile environments

S. Barker , B. Miao , D. Brennan , N. G. Wright
ieee sensors 777 -780

2
2009
Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

M. I. Idris , M. H. Weng , H.-K. Chan , A. E. Murphy
Journal of Applied Physics 120 ( 21) 214902

10
2016
Oxidation Modelling for SiC

N. G. Wright , C. M. Johnson , A. G. O'neill
MRS Proceedings 572 ( 1) 135 -140

2
1999
Crystal structure of ZnTe III at 16 GPa.

R. J. Nelmes , M. I. McMahon , N. G. Wright , D. R. Allan
Physical Review Letters 73 ( 13) 1805 -1808

77
1994
2003