Structure of GaSb to 35 GPa.

M. I. McMahon , R. J. Nelmes , N. G. Wright , D. R. Allan
Physical Review B 50 ( 17) 13047 -13050

40
1994
Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack

R. Mahapatra , Amit K. Chakraborty , A. B. Horsfall , N. G. Wright
Applied Physics Letters 92 ( 4) 042904

35
2008
Implanted bipolar technology in 4H-SiC

N. G. Wright , C. M. Johnson , A. G. O'Neill , A. Horsfall
MRS Proceedings 622 ( 1) 171 -176

1
2000
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology

N. G. Wright , C. M. Johnson , A. G. O'Neill , A. Horsfall
MRS Proceedings 640 ( 1) 1 -5

2000
Pressure evolution of the cinnabar phase of HgTe.

A. San-Miguel , N. G. Wright , M. I. McMahon , R. J. Nelmes
Physical Review B 51 ( 14) 8731 -8736

46
1995
High linearity silicon carbide detectors for medical applications

N. S. Mohamed , N. G. Wright , A. B. Horsfall
nuclear science symposium and medical imaging conference 1 -5

2
2016
Field enhanced diffusion of nitrogen and boron in 4H-silicon carbide

G. J. Phelps , E. G. Chester , C. M. Johnson , N. G. Wright
Journal of Applied Physics 94 ( 7) 4285 -4290

7
2003
Observation of a high-pressure cinnabar phase in CdTe.

R. J. Nelmes , M. I. McMahon , N. G. Wright , D. R. Allan
Physical Review B 48 ( 2) 1314 -1317

46
1993
Crystal structure of the cinnabar phase of HgTe.

N. G. Wright , M. I. McMahon , R. J. Nelmes , A. San-Miguel
Physical Review B 48 ( 17) 13111 -13114

46
1993
High-pressure crystal structure of HgTe-IV.

M. I. McMahon , N. G. Wright , D. R. Allan , R. J. Nelmes
Physical Review B 53 ( 5) 2163 -2166

28
1996
Enhanced nitrogen diffusion in 4H-SiC

G. J. Phelps , N. G. Wright , E. G. Chester , C. M. Johnson
Applied Physics Letters 80 ( 2) 228 -230

9
2002
Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

A. P. Knights , M. A. Lourenço , K. P. Homewood , D. J. Morrison
Journal of Applied Physics 87 ( 8) 3973 -3977

16
2000
Characterization of thermally oxidized Ti∕SiO2 gate dielectric stacks on 4H–SiC substrate

R. Mahapatra , N. Poolamai , S. Chattopadhyay , N. G. Wright
Applied Physics Letters 88 ( 7) 072910

27
2006
Phase transitions in CdTe to 5 GPa

M. I. McMahon , R. J. Nelmes , N. G. Wright , D. R. Allan
Physical Review B 48 ( 22) 16246 -16251

1993
Investigation of a Solid-State Damping Resistor for HVDC applications

Nick Wright , Ikenna Efika , Amit Tiwari , David Trainer
PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of 1 -6

2015
Top down and Bottom-up Routes to Nanoscale Electronic Components

Andrew Houlton , Sarah Olsen , Anthony O'Neill , Nick Wright
Intel European Research and Innovation Conference

2008
Experimental demonstration of a solid-state damping resistor for HVDC applications

Nick Wright , Ikenna Efika , Amit Tiwari , David Trainer
2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016 1 -7

2016
Use of the deficit model in a shared culture of argumentation : the case of foot and mouth science

Nick Wright , Brigitte Nerlich
Public Understanding of Science 15 ( 3) 331 -342

33
2006
AR-Aided Smart Sensing for In-Line Condition Monitoring of IGBT Wafer

Kongjing Li , Gui Yun Tian , Xiaotian Chen , Chaoqing Tang
IEEE Transactions on Industrial Electronics 66 ( 10) 8197 -8204

1
2019
Just do it - a case study in Gestalt experimental coaching

Nick Wright
Industrial and Commercial Training 44 ( 2) 67 -74

2
2012