High linearity silicon carbide detectors for medical applications

摘要: Silicon carbide is well known as a radiation hard semiconductor, that has been demonstrated in range of detector structures for deployment application where the ability to tolerate high dose imperative. This includes applications space and nuclear environments, detect highly energetic important. In contrast, medical treatment uses rates energies here we investigate response linearity tolerant fabricated using silicon 0.185mGy.min−1. rate typical those used imaging purposes, rather than radiotherapy treatment. The data show generated current originates within depletion region linearly dependent on volume charge region. realization vertical structure, coupled with quality epitaxial layers, resulted sensitivity are significantly higher published previously moderate testing.