Implanted bipolar technology in 4H-SiC

摘要: A simple ion-implanted bipolar transistor technology in 4H-SiC is presented. Suitable for both high-voltage vertical devices and lateral high-temperature transistors (for circuit applications), the based on an implanted boron p-well with nitrogen (or aluminium) n+ p+ regions respectively. The effects of base doping carrier lifetime device performance have been studied using TCAD techniques. It shown that understanding strong variation concentration temperature (due to deep activation levels) applied field (so-called ionization) critical design optimisation. post-implant anneal conditions physical electrical characteristics junctions are investigated. annealing can remove much damage induced by high dose implantation but residual still present. BJT breakdown voltages excess 1000V common-emitter gains ≈2 related level such damage.