110-GHz GaInAs/InP double heterostructure p-i-n photodetectors
作者： Yih-Guei Wey , K. Giboney , J. Bowers , M. Rodwell , P. Silvestre
DOI: 10.1109/50.400717
关键词:
摘要: Long-wavelength GaInAs/InP graded double heterostructure p-i-n photodiodes are demonstrated with 3-dB bandwidths over 100 GHz. The heterojunction hole trapping problem is significantly improved and the device contact resistivity greatly reduced by using superlattice bandgap layers at hetero-interfaces to reduce barrier height. Self-aligned processes used in fabrication parasitics. Pulsewidths as short 3.0 ps full-width-at-its-half-maximum (FWHM) for 2 /spl mu/m/spl times/2 mu/m measured pump-probe electrooptic sampling. GHz found 3 times/3 devices. integrated bias tee can be biased without external tee. electrical resonance between photodiode circuits was integrating an impedance matched resistor parallel photodiode. 7 times/7 has a pulsewidth of 3.8 bandwidth calculated pulse shape based on saturation velocity model fits well response. A different components series resistance agrees area dependence resistance. >
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sci-hub.se 参考文章(7)
K‐K. Law, R. H. Yan, A. C. Gossard, J. L. Merz, Electric‐field‐induced absorption changes in triangular quantum wells grown by pulsed‐beam molecular‐beam‐epitaxy technique Journal of Applied Physics. ,vol. 67, pp. 6461- 6465 ,(1990) , 10.1063/1.345120
S. R. Forrest, O. K. Kim, R. G. Smith, Optical response time of In0.53Ga0.47As/InP avalanche photodiodes Applied Physics Letters. ,vol. 41, pp. 95- 98 ,(1982) , 10.1063/1.93302
D.T. Cheung, S.Y. Chiang, G.L. Pearson, A simplified model for graded-gap heterojunctions Solid-State Electronics. ,vol. 18, pp. 263- 266 ,(1975) , 10.1016/0038-1101(75)90058-1
Y. G. Wey, D. L. Crawford, K. Giboney, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich, G. Y. Robinson, Ultrafast graded double‐heterostructure GaInAs/InP photodiode Applied Physics Letters. ,vol. 58, pp. 2156- 2158 ,(1991) , 10.1063/1.104991
K.J. Weingarten, M.J.W. Rodwel, D.M. Bloom, Picosecond optical sampling of GaAs integrated circuits IEEE Journal of Quantum Electronics. ,vol. 24, pp. 198- 220 ,(1988) , 10.1109/3.115
K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, M. Yaita, 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength IEEE Photonics Technology Letters. ,vol. 6, pp. 719- 721 ,(1994) , 10.1109/68.300173
N. J. Williams, R. D. Esman, T. F. Carruthers, Photodetector bandwidth reduction and signal distortion optical fiber communication conference. ,(1991) , 10.1364/OFC.1991.THO5