Multiscale Computer Aided Design of Microwave-Band P-I-N Photodetectors

摘要: Long wavelength InP-based p-i-n photodetectors (PD) are ubiquitous in modern optoelectronic circuits due to their inherent combination of ultra-high speed, high sensitivity the most popular for telecom systems spectral range 1.3-1.6 μm, and low bias voltages features that impossible principle Si, GaAs or Ge counterparts. Typical material GaInAsP GaInAs on InP substrate (Capasso et al., 1985). Now number classical present-day works (see, e.g. Bowers & Burrus, 1987; Beling Campbell, 2009) is well-proved compound semiconductor have valid merits such as: responsivity (up 1 A/W), lowest dark current (below 10 fA), bandwidth 100 GHz above), possibility monolithic receiver module creation common substrate.