Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application
作者： A Jean , M Chaker , Y Diawara , PK Leung , E Gat
DOI: 10.1063/1.351471
关键词:
摘要: Hydrogenated amorphous a‐SixC1−x:H films with various compositions (0.2≤x≤0.8) were prepared by a radio frequency (rf 100 kHz) glow discharge decomposition of silane and methane mixture diluted in argon. The deposition system used was commercially available plasma enhanced chemical vapor reactor allowing high throughput (22 wafers 4 in. diameter each run). properties the such as thickness, density, stress investigated. composition, including hydrogen content Si/C ratio, structure systematically examined means several diagnostics electron recoil detection, x‐ray photoelectron spectroscopy, infrared (IR) absorption analysis. Thickness density dependent on film while highly compressive (3×109–1×1010 dynes/cm2). Density about 2.4 g/cm3 for nearly stoichiometric SiC films. practically constant at 27 at. % ove...
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