Intrinsic stress and mechanical properties of hydrogenated silicon carbide produced by plasma‐enhanced chemical vapor deposition

摘要: Hydrogenated SiC films were deposited by radio frequency plasma chemical vapor deposition in a silane–ethylene gas mixture. In the as‐deposited condition are compression with absolute values as high 2×1010 dyn/cm2 (2 GPa). The origin of stress is attributed to hydrogen incorporation, evidenced C–H and Si–H bands observed infrared transmission measurements films. content was measured directly 15N nuclear reaction analysis. Values 40% (at.) observed. Annealing vacuum above 400 °C eliminated hydrogen‐related bands, accompanied simultaneous reversal from compressive tensile. It shown that magnitude sign can be modulated, depending on annealing conditions. ultimate tensile strength elastic modulus using bulge test free‐standing membranes. Their close bulk values. Raman spectroscopy x‐ray diffraction show amorphous. S...