Hyperfine interaction study of the decoration of the internal wall of nanosized voids by impurity probes

作者: Wim Deweerd , Raf Moons , Joris Verheyden , Shmuel Bukshpan , Guido Langouche

DOI: 10.1016/0168-583X(95)00713-X

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摘要: Abstract We observe the trapping of implanted radioactive 57 Co atoms at empty nano-cavities formed in {111} Si by desorption He from bubbles. The absorption 14.4 keV γ-rays roughly monitors displacement activity, while anodic stripping and counting remaining 122 γ-ray intensity is employed to obtain an accurate depth profile isolate wanted fraction sample. Mossbauer spectroscopy shows that only damage and/or CoSi 2 -nuclei related sites are present samples 300 400°C. In a sample with RT same side as cavity-generating atoms, spectra reveal two new quadrupole split components after 30 min annealing 700°C. arguments for tentative identification these cavity edge site (79%, strong bonding) plane (21%, weak bonding).

参考文章(9)
Eicke R. Weber, Transition metals in silicon Applied Physics A. ,vol. 30, pp. 1- 22 ,(1983) , 10.1007/BF00617708
M. Apel, I. Hanke, R. Schindler, W. Schröter, Aluminum gettering of cobalt in silicon Journal of Applied Physics. ,vol. 76, pp. 4432- 4433 ,(1994) , 10.1063/1.357339
V. Raineri, A. Battaglia, E. Rimini, Gettering of metals by He induced voids in silicon Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 96, pp. 249- 252 ,(1995) , 10.1016/0168-583X(94)00493-5
G. Schatz, X. L. Ding, R. Fink, G. Krausch, B. Luckscheiter, R. Platzer, J. Voigt, U. Wöhrmann, R. Wesche, Hyperfine-interaction studies of surfaces Hyperfine Interactions. ,vol. 60, pp. 975- 989 ,(1990) , 10.1007/BF02399911
S. M. Myers, D. M. Bishop, D. M. Follstaedt, H. J. Stein, W. R. Wampler, Solute binding at void surfaces in silicon and germanium MRS Proceedings. ,vol. 283, ,(1992) , 10.1557/PROC-283-549
J. Wong-Leung, J.S. Williams, R.G. Elliman, E. Nygren, D.J. Eaglesham, D.C. Jacobson, J.M. Poate, Proximity gettering of Au to ion beam induced defects in silicon Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 96, pp. 253- 256 ,(1995) , 10.1016/0168-583X(94)00494-3
G. Langouche, M. De Potter, I. Dezsi, M. Van Rossum, Mössbauer study of the microscopic surrounding of co atoms implanted in si and ge below the full amorphization limit Radiation Effects and Defects in Solids. ,vol. 67, pp. 101- 106 ,(1982) , 10.1080/01422448208226865
M.H.F. Overwijk, J. Politiek, R.C.M. de Kruif, P.C. Zalm, Proximity gettering of transition metals in silicon by ion implantation Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 96, pp. 257- 260 ,(1995) , 10.1016/0168-583X(94)00495-1
G. Krausch, T. Detzel, R. Fink, B. Luckscheiter, R. Platzer, U. Wöhrmann, G. Schatz, Binding and mobility of isolated indium atoms on Si(111) 7×7 Physical Review Letters. ,vol. 68, pp. 377- 380 ,(1992) , 10.1103/PHYSREVLETT.68.377