作者: Wim Deweerd , Raf Moons , Joris Verheyden , Shmuel Bukshpan , Guido Langouche
DOI: 10.1016/0168-583X(95)00713-X
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摘要: Abstract We observe the trapping of implanted radioactive 57 Co atoms at empty nano-cavities formed in {111} Si by desorption He from bubbles. The absorption 14.4 keV γ-rays roughly monitors displacement activity, while anodic stripping and counting remaining 122 γ-ray intensity is employed to obtain an accurate depth profile isolate wanted fraction sample. Mossbauer spectroscopy shows that only damage and/or CoSi 2 -nuclei related sites are present samples 300 400°C. In a sample with RT same side as cavity-generating atoms, spectra reveal two new quadrupole split components after 30 min annealing 700°C. arguments for tentative identification these cavity edge site (79%, strong bonding) plane (21%, weak bonding).