Gettering of metals by He induced voids in silicon
作者： V. Raineri , A. Battaglia , E. Rimini
DOI: 10.1016/0168-583X(94)00493-5
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摘要: He bubbles were formed in Si substrates implanting at doses ranging from 5 × 1015 / cm2 to 1 1017 and energies the range of 40–300 keV. Bubbles are only if a dose 1016 /cm2 40 keV is exceeded, while 300 has be reached. If present as-implanted sample after annealing 700°C voids formed. The void evolution during subsequent thermal processing was studied detail. stability found excellent for long treatments an increase diameter with increasing temperature observed. gettering reactivity these higher than conventional processes.
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