SiC crystal growth by HTCVD
作者： Alexsandre Ellison , Björn Magnusson , Björn Sundqvist , G.R. Pozina , Peder Bergman
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.457-460.9
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摘要: … of the HTCVD technique for growth of bulk 2-inch diameter 4H SiC crystals are reviewed with demonstration of micropipe density down to 0.3 cm -2 , low crystal bending and X-ray …
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researchgate.net 参考文章(8)
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