Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes
作者： Naofumi Shimizu , Noriyuki Watanabe , Tomofumi Furuta , Tadao Ishibashi
DOI: 10.1063/1.125979
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摘要: The minority electron diffusivity of p-In0.53Ga0.47As measured through the photoresponse uni-traveling-carrier photodiodes is reported. An electro-optic sampling technique was used to determine parameter with good accuracy. obtained diffusivities are 260, 130, and 86 cm2/s at acceptor doping levels 2.5×1017, 1.0×1018, 2.5×1018 cm−3, respectively. These values contrary those from theoretical analysis, which predicts a 50% mobility reduction by coupled polar-phonon plasmon scattering in range below mid-1018 cm−3.
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