A comparison of minority electron transport in In0.53Ga0.47As and GaAs

摘要: The electron transport properties of heavily doped p‐type In0.53Ga0.47As and GaAs have been investigated the applications in heterojunction bipolar transistors (HBTs) are emphasized. Using dielectric function formalism, we characterized minority terms mean‐free path diffusivity. These parameters quantify nonequilibrium (ballistic) near‐equilibrium (diffusive) base region HBTs. Our calculations demonstrate that energies above 300 meV provide no benefit for ballistic InGaAs momentum relaxation path. Especially very cases (∼1020 cm−3), low‐energy injection into is more advantageous transport, as well succeeding base‐collector depletion region. When diffusive dominant, exhibits superior performance over a wide range doping concentrations.