Bandwidth characteristics of InP/InGaAs uni-traveling-carrier photodiodes
作者： N. Shimizu , N. Watanabe , T. Furuta , T. Ishibashi
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摘要: We report on the photoresponse of InP-InGaAs uni-traveling-carrier photodiodes (UTC-PDs) for different absorption layer thicknesses. The result indicates that bandwidth is described by a constant diffusion coefficient, which as high majority electrons. This contrary to theoretical analysis, predicts 50% reduction in electron mobility due coupled polar-phonon plasmon scattering 10/sup 18/ cm/sup 3/ doping range.
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