Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers
作者： C. R. Bolognesi , H. G. Liu , N. Tao , X. Zhang , S. Bagheri-Najimi
DOI: 10.1063/1.1949290
关键词:
摘要: We report on the tradeoff between current gain β and base sheet resistance RSH in metalorganic chemical vapor deposition-grown NpN InP∕GaAs1−xSbx∕InP double-heterojunction bipolar transistors (DHBTs) with heavy carbon-doping levels resulting hole concentrations NB ranging from 4×1019 to 12×1019∕cm3. In contrast Ga0.47In0.53As GaAs–based transistors, which both display variations proportional 1∕(NB×WB)2 due Auger recombination at high doping levels, neutral InP∕GaAsSb∕InP DHBTs is not limited by processes, measured 1∕(NB×WB). show that GaAs1−xSbx layers offer a growing lifetime advantage over increasing levels. Potential explanations for observed suppression of InP–GaAsSb system are proposed.
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