Influence of nitrogen flow rates on iron nitride thin films prepared by DC reactive magnetron sputtering
作者： K. Jantasom , M. Horprathum , P. Eiamchai , S. Limwichean , N. Nuntawong
DOI: 10.1016/J.MATPR.2017.06.112
关键词:
摘要: Abstract Iron nitride (FeN) thin films were deposited on silicon wafer substrates by dc reactive magnetron sputtering techniques. The FeN prepared at the fixed substrate temperature 200°C under different nitrogen flow rates. crystal structures, physical morphologies, and surface roughness of characterized grazing-incident X-ray diffraction (GIXRD), field-emission scanning electron microscopy (FE-SEM), atomic force (AFM), respectively. From results, GIXRD patterns indicated change in film orientations from ξ-Fe2N to γ”-FeN along with increased In addition, FE-SEM micrographs demonstrated decrease thickness. effects rates towards crystallinity, morphology, investigated discussed.
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