Perfect GMR effect in gapped graphene-based ferromagnetic-normal-ferromagnetic junctions
作者： Hossein Karbaschi , Gholam Reza Rashedi
DOI: 10.1088/1674-1056/24/4/047305
关键词:
摘要: We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using Dirac–Bogoliubov–de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers FG/NG/FG structures are considered as massive relativistic particles. Transmission probability, charge, spin conductances studied a function of exchange energy ferromagnets (h), size gap, thickness normal region (L) respectively. Using experimental values Fermi part (EFN ~ 400 meV) gap (260 meV for 50 substrate), it shown that this structure can be used both spin-up spin-down polarized current. latter case has different behavior from gapless structures. Also perfect charge giant magnetoresistance observed range .
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