GMR effects in graphene-based Ferromagnetic/Normal/Ferromagnetic junctions

作者: F.M. Mojarabian , G. Rashedi

DOI: 10.1016/J.PHYSE.2011.10.019

关键词:

摘要: In this paper the parallel and antiparallel graphene based Ferromagnet–Normal–Ferromagnet (FNF) structures are investigated theoretically. Effect of alignments strength ferromagnets thickness normal region temperature on charge, spin thermal conductances studied. A survey Giant magnetoresistance (GMR) has been done we have shown that, different. paper, study calculate all kinds GMR including charge-GMR, thermal-GMR also spin-GMR for a FNF systems. Although charge-GMR is important useful in fabrication magnetic information storage many works but few papers exist about spin-GMR. Also with consideration current observed definite ferromagnetic film presence charge current, zero. This latter case can be used as spin-valve.

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